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| TPC8405 TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (P Channel U-MOS IV/N Channel U-MOS III) TPC8405 Lithium Ion Secondary Battery Applications Portable Equipment Applications Notebook PC Applications Low drain-source ON resistance : P Channel RDS (ON) = 25 m (typ.) N Channel RDS (ON) = 20 m (typ.) High forward transfer admittance : P Channel |Yfs| = 12S (typ.) N Channel |Yfs| = 14S (typ.) Low leakage current : P Channel IDSS = -10 A (VDS = -30 V) N Channel IDSS = 10 A (VDS = 30 V) Enhancement-mode : P Channel Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -1 mA) N Channel Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) PD (2) PD (1) PD (2) EAS IAR EAR Tch Tstg Rating P Channel N Channel -30 -30 20 -4.5 -18 1.5 1.1 0.75 0.45 13.2 (Note 4a) -4.5 0.1 150 -55 to 150 30 30 20 6 24 1.5 1.1 W 0.75 0.45 23.4 (Note 4b) 6 mJ A mJ C C Unit V V V A JEDEC JEITA TOSHIBA 2-6J1E Drain power Single-device operation (Note 3a) dissipation (t = 10s) Single-device value at (Note 2a) dual operation (Note 3b) Drain power dissipation Single-device operation (Note 3a) Weight: 0.080 g (typ.) Circuit Configuration (t = 10s) Single-device value at (Note 2b) dual operation (Note 3b) Single pulse avalanche energy Avalanche current Repetitive avalanche energy Single-device value at operation (Note 2a, 3b, 5) Channel temperature Storage temperature range Note: For Notes 1 to 5, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with care. 1 2009-09-29 TPC8405 Thermal Characteristics Characteristics Single-device operation (Note 3a) Symbol Rth (ch-a) (1) Rth (ch-a) (2) Rth (ch-a) (1) Rth (ch-a) (2) Max 83.3 Unit Thermal resistance, channel to ambient (t = 10s) (Note 2a) Single-device value at dual operation (Note 3b) 114 C/W 167 Thermal resistance, channel to ambient (t = 10s) (Note 2b) Single-device value at dual operation (Note 3b) Single-device operation (Note 3a) 278 Marking (Note 6) TPC8405 Part No. (or abbreviation code) Lot No. Note 7 Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: a) Device mounted on a glass-epoxy board (a) FR-4 25.4 x 25.4 x 0.8 (unit: mm) b) Device mounted on a glass-epoxy board (b) FR-4 25.4 x 25.4 x 0.8 (unit: mm) (a) (b) Note 3: a) The power dissipation and thermal resistance values shown are for a single device. (During single-device operation, power is applied to one device only.) b) The power dissipation and thermal resistance values shown are for a single device. (During dual operation, power is evenly applied to both devices.) Note 4: a) VDD = -24 V, Tch = 25C (initial), L = 0.5 mH, RG = 25 , IAR = -4.5 A b) VDD = 24 V, Tch = 25C (initial), L = 0.5 mH, RG = 25 , IAR = 6.0 A Note 5: Repetitive rating: pulse width limited by maximum channel temperature Note 6: * on the lower left of the marking indicates Pin 1. * Weekly code: (Three digits) Week of manufacture (01 for first week of year, continuing up to 52 or 53) Year of manufacture (The last digit of the calendar year) Note 7: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2009-09-29 TPC8405 P-ch Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) RDS (ON) |Yfs| Ciss Crss Coss tr ton tf toff Qg Qgs1 Qgd VDD -24 V, VGS = -10 V, ID = -4.5 A VDS = -10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 16 V, VDS = 0 V VDS = -30 V, VGS = 0 V ID = -10 mA, VGS = 0 V ID = -10 mA, VGS = 20 V VDS = -10 V, ID = -1 mA VGS = -4.5 V, ID = -2.2 A VGS = -10 V, ID = -2.2 A VDS = -10 V, ID = -2.2 A Min -- -- -30 -15 -0.8 -- -- 6 -- -- -- -- Typ. -- -- -- -- -- 32 25 12 1540 220 250 5.0 Max 10 -10 -- -- -2.0 42 33 -- -- -- -- -- pF Unit A A V V m S Turn-ON time Switching time Fall time -- 13 -- ns -- 35 -- Turn-OFF time Total gate charge (Gate-source plus gate-drain) Gate-source charge 1 Gate-drain ("miller") charge -- -- -- -- 125 40 4.4 8.2 -- -- -- -- nC Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Drain reverse current Pulse (Note 1) Symbol IDRP VDSF Test Condition -- IDR = -4.5 A, VGS = 0 V Min -- -- Typ. -- -- Max -18 1.2 Unit A V Forward voltage (diode) 3 2009-09-29 TPC8405 N-ch Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) RDS (ON) |Yfs| Ciss Crss Coss tr ton tf toff Qg Qgs1 Qgd VDD 24 V, VGS = 10 V, ID = 6 A VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 16 V, VDS = 0 V VDS = 30 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = -20 V VDS = 10 V, ID = 1 mA VGS = 4.5 V, ID = 3 A VGS = 10 V, ID = 3 A VDS = 10 V, ID = 3 A Min 30 15 1.3 7 Typ. 25 20 14 1240 180 230 4.5 Max 10 10 2.5 33 26 pF Unit A A V V m S Turn-ON time Switching time Fall time 12.5 ns 6.6 Turn-OFF time Total gate charge (Gate-source plus gate-drain) Gate-source charge 1 Gate-drain ("miller") charge 33 27 3.9 7.0 nC Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Drain reverse current Pulse (Note 1) Symbol IDRP VDSF IDR = 6 A, VGS = 0 V Test Condition -- Min -- -- Typ. -- -- Max 24 -1.2 Unit A V Forward voltage (diode) 4 2009-09-29 TPC8405 P-ch ID - VDS -10 -10 -8 -6 -4 -3.2 -2.8 Common source Ta = 25C Pulse test -2.6 -6 -2.4 -2.3 -4 -2.2 -2.1 -2 VGS = -2 V 0 0 -18 -10 -6 -15 -4 -3.2 ID - VDS -2.8 Common source Ta = 25C Pulse test (A) (A) -8 ID Drain current Drain current ID -12 -2.6 -9 -2.4 -2.3 -2.2 -2.1 VGS = -2 V -1 -2 -3 -4 -5 -6 -3 -0.2 -0.4 -0.6 -0.8 -1.0 0 0 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID - VGS -18 -0.6 VDS - VGS VDS (V) Common source Ta = 25C Pulse test -15 Common source VDS = -10 V Pulse test -0.5 (A) ID -12 -0.4 -9 Drain-source voltage Drain current -0.3 -6 25 -0.2 ID = -4.5 A -1.3 -2.2 -3 Ta = -55C 100 -0.1 0 0 -1 -2 -3 -4 -5 0 0 -2 -4 -6 -8 -10 -12 Gate-source voltage VGS (V) Gate-source voltage VGS (V) |Yfs| - ID 100 Common source VDS = -10 V Pulse test 100 RDS (ON) - ID Forward transfer admittance |Yfs| (S) Ta = -55C 100 10 25 Drain-source ON resistance RDS (ON) (m) VGS = -4.5 V -10 10 1 -0.1 -1 -10 -100 1 -0.1 Common source Ta = 25C Pulse test -1 -10 -100 Drain current ID (A) Drain current ID (A) 5 2009-09-29 TPC8405 P-ch RDS (ON) - Ta 50 Common source ID = -1.3 A, -2.2 A, -4.5 A Pulse test 40 -100 IDR - VDS (A) Common source Ta = 25C Pulse test -10 -10 -5 -3 Drain-source ON resistance RDS (ON) (m) 30 VGS = -4.5 V Drain reverse current IDR 20 VGS = -10 V ID = -1.3 A, -2.2 A, -4.5 A -1 -1 VGS = 0 V 10 0 -80 -40 0 40 80 120 160 -0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 Ambient temperature Ta (C) Drain-source voltage VDS (V) C - VDS 10000 -2.0 Vth - Ta Common source VDS = -10 V -1.6 ID = -1 mA Pulse test -1.2 (pF) Ciss 1000 Gate threshold voltage Capacitance C Vth (V) Coss Crss 100 Common source VGS = 0 V f = 1 MHz Ta = 25C 10 -0.1 -1 -10 -100 -0.8 -0.4 0 -80 -40 0 40 80 120 160 Ambient temperature Ta (C) Drain-source voltage VDS (V) PD - Ta 2.0 Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b) t = 10 s Dynamic input/output characteristics -40 Common source -16 ID = -4.5 A Ta = 25C -30 Pulse test VDS -20 -6 -10 -12 (W) VDS (V) PD Drain power dissipation Drain-source voltage -12 -8 VDD = -24 V -4 0.8 (3) (4) 0.4 VGS 0 0 10 20 30 40 0 50 0 0 50 100 150 200 Ambient temperature Ta (C) Total gate charge Qg (nC) 6 2009-09-29 Gate-source voltage 1.2 (2) VGS 1.6 (1) (V) TPC8405 P-ch rth - tw 1000 Single pulse (4) (3) (2) (1) 100 Transient thermal impedance rth (C/W) 10 1 Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b) t = 10 s 0.1 0.001 0.01 0.1 1 10 100 1000 Pulse width tw (s) Safe operating area -100 Single-device value at dual operation (Note 3b) ID max (Pulse)* (A) -10 Drain current ID 1 ms* 10 ms* -1 *: Single nonrepetitive pulse Ta = 25C Curves must be derated linearly with increase in temperature -0.1 -0.1 VDSS max -1 -10 -100 Drain-source voltage VDS (V) 7 2009-09-29 TPC8405 N-ch ID - VDS 10 10 6 8 4 3.3 3.2 Common source Ta = 25C Pulse test 3.1 20 10 6 16 4 3.6 3.8 3.4 ID - VDS Common source Ta = 25C Pulse test (A) 3.6 6 3.4 (A) 3.8 3 3.3 12 3.2 3.1 8 3 2.9 4 2.8 2.7 ID Drain current 4 2.8 2.7 2 VGS = 2.6 V 0 0 0.2 0.4 0.6 0.8 1.0 Drain current 2.9 ID 0 0 VGS = 2.6 V 1 2 3 4 5 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID - VGS 20 0.6 VDS - VGS VDS (V) Common source Ta = 25C Pulse test (A) 16 Common source VDS = 10 V Pulse test 0.5 ID 0.4 Drain-source voltage 12 Drain current 0.3 8 25 0.2 ID = 6 A 0.1 1.5 3 4 100 Ta = -55C 0 0 1 2 3 4 5 6 0 0 2 4 6 8 10 12 Gate-source voltage VGS (V) Gate-source voltage VGS (V) |Yfs| - ID 100 Common source VDS = 10 V Pulse test 1000 RDS (ON) - ID Common source Ta = 25C Pulse test 10 -55C 25C Ta = 100C Drain-source ON resistance RDS (ON) (m) Forward transfer admittance Yfs (S) 100 VGS = 4.5 V 1 10 VGS = 10 V 0.1 0.1 1 10 100 1 1 10 100 Drain current ID (A) Drain current ID (A) 8 2009-09-29 TPC8405 N-ch RDS (ON) - Ta 50 Common source Pulse test 100 IDR - VDS Common source Ta = 25C Pulse test (A) Drain-source On resistance RDS (ON) (m) 40 ID = 4.5 A 30 VGS = 4.5 V 20 ID = 1.3 A 10 VGS = 10 V ID = 2.2 A ID = 4.5 A ID = 2.2 A ID = 1.3 A 10 5 3 IDR Drain reverse current 10 1 1 VGS = 0 V 0 -80 -40 0 40 80 120 160 0.1 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 Ambient temperature Ta (C) Drain-source voltage VDS (V) C - VDS 10000 5 Common source Vth - Ta Vth (V) VDS = 10 V 4 ID = 1 mA Pulse test 3 (pF) 1000 Ciss 100 Common source VGS = 0 V f = 1 MHz Ta = 25C 10 0.1 1 10 Coss Crss Gate threshold voltage Capacitance C 2 1 100 0 -80 -40 0 40 80 120 160 Drain-source voltage VDS (V) Ambient temperature Ta (C) PD - Ta 2.0 Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b) t = 10 s Dynamic input/output characteristics 40 Common source 16 Ta = 25C 30 ID = 6 A Pulse test VDS 20 6 10 VGS 0 0 0 40 VDD = 24 V 4 12 8 12 (W) VDS (V) PD Drain power dissipation Drain-source voltage 0.8 (3) (4) 0.4 0 0 50 100 150 200 10 20 30 Ambient temperature Ta (C) Total gate charge Qg (nC) 9 2009-09-29 Gate-source voltage 1.2 (2) VGS 1.6 (1) (V) TPC8405 N-ch rth - tw 1000 Single pulse (4) (3) (2) (1) Transient thermal impedance rth (C/W) 100 10 1 Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b) t = 10 s 0.1 0.001 0.01 0.1 1 10 100 1000 Pulse width Safe operating area 100 Single-device value at dual operation (Note 3b) ID max (Pulse) * tw (s) (A) 10 1 ms* Drain current ID 10 ms* 1 *: Single nonrepetitive pulse Ta = 25C Curves must be derated linearly with increase in temperature 0.1 0.1 VDSS max 1 10 100 Drain-source voltage VDS (V) 10 2009-09-29 TPC8405 RESTRICTIONS ON PRODUCT USE * Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. * This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. * Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application that Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS. * Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document. Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious public impact ("Unintended Use"). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this document. * Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part. * Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. * The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. * ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT. * Do not use or otherwise make available Product or related software or technology for any military purposes, including without limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products (mass destruction weapons). Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. * Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 11 2009-09-29 |
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